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fod3182 ?3a output current, high speed mosfet gate driver optocoupler ?2010 fairchild semiconductor corporation www.fairchildsemi.com fod3182 rev. 1.0.9 f ebruary 2011 fod3182 3a output current, high speed mosfet gate driver optocoupler features high noise immunity characterized by 50kv/s (typ.) common mode rejection @ v cm = 2,000v guaranteed operating temperature range of -40c to +100c 3a peak output current fast switching speed 210ns max. propagation delay 65ns max pulse width distortion fast output rise/fall time offers lower dynamic power dissipation 250khz maximum switching speed wide v dd operating range: 10v to 30v use of p-channel mosfets at output stage enables output voltage swing close to the supply rail (rail-to-rail output) 5000vrms, 1 minute isolation under voltage lockout protection (uvlo) with hysteresis C optimized for driving mosfets minimum creepage distance of 8.0mm minimum clearance distance of 10mm to 16mm (option tv or tsv) minimum insulation thickness of 0.5mm ul and vde* 1,414 peak working insulation voltage (v iorm ) *requires v ordering option applications plasma display panel high performance dc/dc convertor high performance switch mode power supply high performance uninterruptible power supply isolated power mosfet gate drive description the fod3182 is a 3a output current, high speed mosfet gate drive optocoupler. it consists of a aluminium gallium arsenide (algaas) light emitting diode optically coupled to a cmos detector with pmos and nmos output power transistors integrated circuit power stage. it is ideally suited for high frequency driving of power mosfets used in plasma display panels (pdps), motor control inverter applications and high performance dc/dc converters. the device is packaged in an 8-pin dual in-line housing compatible with 260c reflow processes for lead free solder compliance. functional block diagram package outlines 8 8 1 8 1 1 8 1 1 2 3 4 8 7 6 5 nc anode cathode nc v dd v o2 v o1 v ss note: a 0.1f bypass capacitor must be connected between pins 5 and 8.
?2010 fairchild semiconductor corporation www.fairchildsemi.com fod3182 rev. 1.0.9 2 fod3182 ?3a output current, high speed mosfet gate driver optocoupler truth table pin definitions led v dd v ss ?ositive going (turn-on) v dd v ss ?egative going (turn-off) v o off 0v to 30v 0v to 30v low on 0v to 7.4v 0v to 7v low on 7.4v to 9v 7v to 8.5v transition on 9v to 30v 8.5v to 30v high pin # name description 1n c not connected 2 anode led anode 3 cathode led cathode 4n c not connected 5v ss negative supply voltage 6v o2 output voltage 2 (internally connected to v o1 ) 7v o1 output voltage 1 8v dd p ositive supply voltage
?2010 fairchild semiconductor corporation www.fairchildsemi.com fod3182 rev. 1.0.9 3 fod3182 ?3a output current, high speed mosfet gate driver optocoupler safety and insulation ratings as per din en/iec 60747-5-2. this optocoupler is suitable for safe electrical insulation only within the safety limit data. compliance with the safety ratings shall be ensured by means of protective circuits. symbol parameter min. typ. max. unit installation classi?cations per din vde 0110/1.89 table 1 for rated mains voltage < 150vrms iCiv for rated mains voltage < 300vrms iCiv for rated mains voltage < 450vrms iCiii for rated mains voltage < 600vrms iCiii for rated mains voltage < 1000vrms (option t, ts) iCiii climatic classi?cation 40/100/21 p ollution degree (din vde 0110/1.89) 2 cti comparative tracking index 175 v pr input to output test voltage, method b, v iorm x 1.875 = v pr , 100% production test with tm = 1 sec., partial discharge < 5pc 2651 input to output test voltage, method a, v iorm x 1.5 = v pr , type and sample test with tm = 60 sec.,partial discharge < 5 pc 2121 v iorm max working insulation voltage 1,414 v peak v iotm highest allowable over voltage 6000 v peak external creepage 8 mm external clearance 7.4 mm external clearance (for option t or ts - 0.4 lead spacing) 10.16 mm insulation thickness 0.5 mm safety limit values C maximum values allowed in the event of a failure t case case temperature 150 c i s ,input input current 25 ma p s ,output output power (duty factor 2.7%) 250 mw r io insulation resistance at t s , v io = 500v 10 9 ?
?2010 fairchild semiconductor corporation www.fairchildsemi.com fod3182 rev. 1.0.9 4 fod3182 ?3a output current, high speed mosfet gate driver optocoupler absolute maximum ratings (t a = 25? unless otherwise speci?d) stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. in addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. recommended operating conditions the recommended operating conditions table de?nes the conditions for actual device operation. recommended operating conditions are speci?ed to ensure optimal performance to the datasheet speci?cations. fairchild does not recommend exceeding them or designing to absolute maximum ratings. symbol p arameter v alue units t stg storage temperature -40 to +125 ? t opr operating temperature -40 to +100 ? t j j unction temperature -40 to +125 ? t sol lead solder temperature ?wave solder (refer to re?w temperature pro?e, pg. 22) 260 for 10 sec. ? i f(avg) av erage input current (1) 25 ma i f(tr, tf) led current minimum rate of rise/fall 250 ns v r reverse input voltage 5 v i oh(peak) ?igh peak output current (2) 3a i ol(peak) ?ow peak output current (2) 3a v dd ?v ss supply voltage -0.5 to 35 v v o(peak) output voltage 0 to v dd v p o output power dissipation (4) 250 mw p d t otal power dissipation (5) 295 mw symbol p arameter v alue units v dd ?v ss po w er supply 10 to 30 v i f(on) input current (on) 10 to 16 ma v f(off) input voltage (off) -3.0 to 0.8 v
?2010 fairchild semiconductor corporation www.fairchildsemi.com fod3182 rev. 1.0.9 5 fod3182 ?3a output current, high speed mosfet gate driver optocoupler electrical-optical characteristics (dc) apply over all recommended conditions, typical value is measured at v dd = 30v, v ss = 0v, t a = 25?, unless otherwise speci?d. symbol parameter test conditions min. typ. max. unit i oh high level output current v oh = (v dd ?v ss ?1v) 0.5 0.9 a v oh = (v dd ?v ss ?6v) 2.5 i ol low level output current v ol = (v dd ?v ss + 1v) 0.5 1 a v ol = (v dd ?v ss + 6v) 2.5 v oh high level output voltage (5)(6) i o = -100ma v dd ?0.5 v v ol low level output voltage (5)(6) i o = 100ma v ss + 0.5 v i ddh high level supply current output open, i f = 10 to 16ma 2.6 4.0 ma i ddl low level supply current output open, v f = -3.0 to 0.8v 2.5 4.0 ma i flh threshold input current low to high i o = 0ma, v o > 5v 3.0 7.5 ma v fhl threshold input voltage high to low i o = 0ma, v o < 5v 0.8 v v f input forward voltage i f = 10ma 1.1 1.43 1.8 v ? v f /t a t emperature coef?ient of forward v oltage i f = 10ma -1.5 mv/? v uvlo+ uvlo threshold v o > 5v, i f = 10ma 7 8.3 9 v v uvlo v o < 5v, i f = 10ma 6.5 7.7 8.5 v uvlo hyst uvlo hysteresis 0.6 v bv r input reverse breakdown voltage i r = 10? 5 v c in input capacitance f = 1mhz, v f = 0v 25 pf
?2010 fairchild semiconductor corporation www.fairchildsemi.com fod3182 rev. 1.0.9 6 fod3182 ?3a output current, high speed mosfet gate driver optocoupler switching characteristics apply over all recommended conditions, typical value is measured at v dd = 30v, v ss = 0v, t a = 25?, unless otherwise speci?d. isolation characteristics *typical values at t a = 25c symbol p arameter t est conditions min. typ. max. unit t plh propagation delay time to high output level (7) i f = 10ma, r g = 10 ? , f = 250khz, duty cycle = 50%, c g = 10nf 50 120 210 ns t phl propagation delay time to low output level (7) 50 145 210 ns p wd pulse width distortion (8) 35 65 ns p dd (t phl ?t plh ) propagation delay difference between any tw o pa rts (9) -90 90 ns t r rise time c l = 10nf, r g = 10 ? 38 ns t f f all time 24 ns t uvlo on uvlo turn on delay 2.0 ? t uvlo off uvlo turn off delay 0.3 ? | cm h | output high level common mode transient immunity (10) (11) t a = +25?, i f = 7ma to 16ma, v cm = 2kv, v dd = 30v 35 50 kv/? | cm l | output low level common mode transient immunity (10) (12) t a = +25?, v f = 0v, v cm = 2kv, v dd = 30v 35 50 kv/? symbol p arameter t est conditions min. typ.* max. unit v iso withstand isolation voltage (13) (14) t a = 25?, r.h. < 50%, t = 1min., i i-o 10? 5000 v rms r i-o resistance (input to output) (14) v i-o = 500v 10 11 ? c i-o capacitance (input to output) freq. = 1mhz 1 pf
?2010 fairchild semiconductor corporation www.fairchildsemi.com fod3182 rev. 1.0.9 7 fod3182 ?3a output current, high speed mosfet gate driver optocoupler notes: 1. derate linearly above +79? free air temperature at a rate of 0.37ma/?. 2. maximum pulse width = 10?, maximum duty cycle = 11%. 3 derate linearly above +79?, free air temperature at the rate of 5.73mw/?. 4. no derating required across operating temperature range. 5. in this test, v oh is measured with a dc load current of 100ma. when driving capacitive load v oh will approach v dd as i oh approaches zero amps. 6. maximum pulse width = 1ms, maximum duty cycle = 20%. 7. t phl propagation delay is measured from the 50% level on the falling edge of the input pulse to the 50% level of the f alling edge of the v o signal. t plh propagation delay is measured from the 50% level on the rising edge of the input pulse to the 50% level of the rising edge of the v o signal. 8. pwd is de?ed as | t phl ?t plh | for any given device. 8. the difference between t phl and t plh between any two fod3182 parts under same operating conditions, with equal loads. 10. pin 1 and 4 need to be connected to led common. 11. common mode transient immunity in the high state is the maximum tolerable dv cm /dt of the common mode pulse v cm to assure that the output will remain in the high state (i.e. v o > 15v). 12. common mode transient immunity in a low state is the maximum tolerable dv cm /dt of the common mode pulse, v cm , to assure that the output will remain in a low state (i.e. v o < 1.0v). 13. in accordance with ul 1577, each optocoupler is proof tested by applying an insulation test voltage > 6000vrms, 60hz for 1 second (leakage detection current limit i i-o < 10?). 14. device considered a two-terminal device: pins on input side shorted together and pins on output side shorted together.
?2010 fairchild semiconductor corporation www.fairchildsemi.com fod3182 rev. 1.0.9 8 fod3182 ?3a output current, high speed mosfet gate driver optocoupler t ypical performance curves fig. 2 output high voltage drop vs. ambient temperature -40 -20 0 20 40 60 80 100 (v oh - v dd ) C high output voltage drop (v) 0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 t a C ambient temperature (c) fig. 1 output high voltage drop vs. output high current 0 0.5 1.0 1.5 2.0 2.5 (v oh - v dd ) C high output voltage drop (v) 0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.-0 -3.5 i oh C output high current (a) v dd = 15v to 30v v ss = 0v i f = 10ma to 16ma i o = -100ma fig. 6 output low voltage vs. ambient temperature -40 -20 0 20 40 60 80 100 v ol C output low voltage (v) 0.30 0.25 0.20 0.15 0.10 0.05 0 t a C ambient temperature (c) v dd = 15v to 30v v ss = 0v v f = -3v to 0.8v i o = 100ma fig. 3 output high current vs. ambient temperature -40 -20 0 20 40 60 80 100 i oh C output high current (a) 8 6 4 2 0 t a C ambient temperature (c) frequency = 200hz duty cycle = 0.2% i f = 10ma to 16ma v dd = 15v to 30v frequency = 200hz duty cycle = 0.1% i f = 10ma to 16ma v dd = 15v to 30v v ss = 0v t a =100c t a = 25c t a = -40c fig. 5 output low voltage vs. output low current 0 0.5 1.0 1.5 2.0 2.5 v ol C output low voltage (v) 4 3 2 1 0 i ol C output low current (a) frequency = 200hz duty cycle = 99.9% v f (off) = 0.8v v dd = 15v to 30v v ss = 0v t a =100c t a = 25c t a = -40c v o = 6v v o = 3v fig. 4 output high current vs. ambient temperature -40 -20 0 20 40 60 80 100 i oh C output high current (a) 8 6 4 2 0 t a C ambient temperature (c) frequency = 100hz duty cycle = 0.5% i f = 10ma to 16ma v dd = 15v to 30v v o = 6v v o = 3v
?2010 fairchild semiconductor corporation www.fairchildsemi.com fod3182 rev. 1.0.9 9 fod3182 ?3a output current, high speed mosfet gate driver optocoupler t ypical performance curves (continued) fig. 7 output low current vs. ambient temperature -40 -20 0 20 40 60 80 100 i ol C output low current (a) 8 6 4 2 0 t a C ambient temperature (c) frequency = 200hz duty cycle = 99.8% v f = 0.8v v dd = 15v to 30v v o = 6v v o = 3v fig. 8 output low current vs. ambient temperature -40 -20 0 20 40 60 80 100 i ol C output low current (a) 8 6 4 2 0 t a C ambient temperature (c) frequency = 100hz duty cycle = 99.5% v f = 0.8v v dd = 15v to 30v v o = 6v v o = 3v fig. 9 supply current vs. ambient temperature -40 -20 0 20 40 60 80 100 i dd C supply current (ma) 3.6 3.4 3.2 3.0 2.8 2.6 2.4 2.2 t a C ambient temperature (c) v dd = 15v to 30v v ss = 0v i f = 0ma (for i ddl ) i f = 10ma (for i ddh ) i ddh (30v) i ddl (30v) i ddh (15v) i ddl (15v) i ddh i ddl fig. 11 low-to-high input current threshold vs. ambient temperature -40 -20 0 20 40 60 80 100 i flh C low-to-high input current threshold (ma) 3.6 3.4 3.2 3.0 2.8 2.6 2.4 2.2 t a C ambient temperature (c) v dd = 15v to 30v v ss = 0v output = open fig. 10 supply current vs. supply voltage 15 20 25 30 i dd C supply current (ma) 3.6 3.2 2.8 2.4 2.0 v dd C supply voltage (v) i f = 0ma (for i ddl ) i f = 10ma (for i ddh ) v ss = 0v t a = 25c fig. 12 propagation delay vs. supply voltage 15 18 21 24 27 30 t p C propagation delay (ns) 250 200 150 100 50 v dd C supply voltage (v) i f = 10ma to 16ma t a = 25c r g = 10? c g = 10nf duty cycle = 50% frequency = 250khz t phl t plh
?2010 fairchild semiconductor corporation www.fairchildsemi.com fod3182 rev. 1.0.9 10 fod3182 ?3a output current, high speed mosfet gate driver optocoupler t ypical performance curves (continued) fig. 14 propagation delay vs. ambient temperature -40 -20 0 20 40 60 80 100 t p C propagation delay (ns) 450 350 250 150 50 t a C ambient temperature (c) i f = 10ma to 16ma v dd = 15v to 30v r g = 10? c g = 10nf duty cycle = 50% frequency = 250khz fig. 13 propagation delay vs. led forward current 6810 12 14 18 t p C propagation delay (ns) 250 200 150 100 50 i f C forward led current (ma) v dd = 15v to 30v t a = 25c r g = 10? c g = 10nf duty cycle = 50% frequency = 250khz t phl t plh fig. 15 propagation delay vs. series load resistance 01020304050 t p C propagation delay (ns) 450 350 250 150 50 r g C series load resistance (?) i f = 10ma to 16ma v dd = 15v to 30v c g = 10nf duty cycle = 50% frequency = 250khz t phl t plh fig. 16 propagation delay vs. series load capacitance 020406 080 100 t p C propagation delay (ns) 450 350 250 150 50 100 10 1 0.1 0.01 0.001 c g C series load capacitance (nf) fig. 18 input forward current vs. forward voltage 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i f C forware current (ma) v r C forware voltage (v) i f = 10ma to 16ma v dd = 15v to 30v r g = 10? duty cycle = 50% frequency = 250khz t phl t plh t phl t plh fig. 17 transfer characteristics 0123 45 v o C output voltage (v) 35 30 25 20 15 10 5 0 i f C forward led current (ma) v dd = 30v t a = 25c t a =100c 25c -40c
?2010 fairchild semiconductor corporation www.fairchildsemi.com fod3182 rev. 1.0.9 11 fod3182 ?3a output current, high speed mosfet gate driver optocoupler t ypical performance curves (continued) fig. 19 under voltage lockout 0510 15 20 v o C output voltage (v) 20 18 16 14 12 10 8 6 4 2 0 (v dd C v ss ) C supply voltage (v) (8.30v) (7.80)
?2010 fairchild semiconductor corporation www.fairchildsemi.com fod3182 rev. 1.0.9 12 fod3182 ?3a output current, high speed mosfet gate driver optocoupler test circuit figure 20. i ol t est circuit figure 21. i oh t est circuit + + power supply v dd = 10v to 30v power supply v = 6v 1 2 pw = 4.99ms period = 5ms r out = 50 ? r2 100 ? frequency = 200hz duty cycle = 99.8% v dd = 10v to 30v v ss = 0v v f(off) = -3.0v to 0.8v c1 0.1 f pulse-in led-ifmon pulse generator test conditions: 3 4 8 7 6 5 to scope v ol r1 100 ? c2 47 f + c3 0.1 f d1 c4 47 f + iol 1 2 pw = 10 s period = 5ms r out = 50 ? r2 100 ? frequency = 200hz duty cycle = 0.2% v dd = 10v to 30v v ss = 0v i f = 10ma to 16ma c1 0.1 f pulse-in led-ifmon pulse generator test conditions: 3 4 8 7 6 5 power supply v dd = 10v to 30v + + power supply v = 6v to scope v oh r1 100 ? c2 47 f + c3 0.1 f d1 current probe ioh c4 47 f +
?2010 fairchild semiconductor corporation www.fairchildsemi.com fod3182 rev. 1.0.9 13 fod3182 ?3a output current, high speed mosfet gate driver optocoupler test circuit (continued) figure 22. v oh t est circuit figure 23. v ol t est circuit 1 2 i f = 10 to 16ma v o 3 4 8 7 6 5 0.1 f 100ma v dd = 10 to 30v + 1 2 v o 3 4 8 7 6 5 0.1 f 100ma v dd = 10 to 30v +
?2010 fairchild semiconductor corporation www.fairchildsemi.com fod3182 rev. 1.0.9 14 fod3182 ?3a output current, high speed mosfet gate driver optocoupler test circuit (continued) figure 24. i ddh t est circuit figure 25. i ddl t est circuit 1 2 i f = 10 to 16ma v o 3 4 8 7 6 5 0.1 f v dd = 30v + 1 2 v f = -0.3 to 0.8v v o 3 4 8 7 6 5 0.1 f v dd = 30v + +
?2010 fairchild semiconductor corporation www.fairchildsemi.com fod3182 rev. 1.0.9 15 fod3182 ?3a output current, high speed mosfet gate driver optocoupler test circuit (continued) figure 26. i flh t est circuit figure 27. v fhl t est circuit figure 28. uvlo test circuit 1 2 v o > 5v 3 4 8 7 6 5 0.1 f if v dd = 10 to 30v + 1 2 v f = ?.3 to 0.8v v o 3 4 8 7 6 5 0.1 f v dd = 10 to 30v + + 1 2 v o = 5v 3 4 8 7 6 5 0.1 f 10v or 30v v dd ramp + i f = 10ma
?2010 fairchild semiconductor corporation www.fairchildsemi.com fod3182 rev. 1.0.9 16 fod3182 ?3a output current, high speed mosfet gate driver optocoupler test circuit (continued) figure 29. t phl , t plh , t r and t f t est circuit and waveforms figure 30. cmr test circuit and waveforms v o probe f = 250khz dc = 50% i f v out t plh cg = 10nf rg = 10 ? 50 ? 1 2 3 4 8 7 6 5 0.1 f v dd = 10 to 30v + + t r t f 90% 50% 10% t phl 1 2 a b v o 3 4 8 7 6 5 0.1 f v dd = 30v v cm = 2,000v i f + 5v + ? t v cm v o switch at a: i f = 10ma switch at b: i f = 0ma v oh v o v ol 0v +
?2010 fairchild semiconductor corporation www.fairchildsemi.com fod3182 rev. 1.0.9 17 fod3182 ?3a output current, high speed mosfet gate driver optocoupler pa ck ag e dimensions pa c kage drawings are provided as a service to customers considering fairchild components. drawings may change in any manner without notice. please note the revision and/or date on the drawing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package speci?ations do not expand the terms of fairchilds worldwide terms and conditions, speci?ally the warranty therein, which covers fairchild products. always visit fairchild semiconductors online packaging area for the most recent package drawings: http://www .f airchildsemi.com/pac kaging/ through hole surface mount ?0.3" lead spacing (option s) note: 1. all dimensions are in millimeters. 2. dimensions are exclusive of burrs, mold fash, and tie bar extrusion. 0.4" lead spacing (option t) 9.40?.91 pin 1 6.35?.86 5.08 max 3.05?.90 (0.78) 2.54 bsc 7.62 typ 0.20?.40 0.41?.56 3.68?.94 1.14?.78 0.51 min 9.40?.91 pin 1 6.35?.86 15.0?max 10.16 typ 0.20?.40 5.08 max (0.78) 2.54 bsc 0.41?.56 3.68?.94 1.14?.78 0.51 min 3.05?.90 9.40?.91 pin 1 6.35?.86 (1.54) (1.78) (7.49) (0.76) (2.54) (10.54) recommended land pattern (option s) 5.08 max (0.78) (0.41?.56) 8.00 min 10.30 max 2.54 bsc 3.68?.94 1.14?.78 0.20?.40 0.40 min both sides 0.51 min
?2010 fairchild semiconductor corporation www.fairchildsemi.com fod3182 rev. 1.0.9 18 fod3182 ?3a output current, high speed mosfet gate driver optocoupler pa ck ag e dimensions (continued) pa c kage drawings are provided as a service to customers considering fairchild components. drawings may change in any manner without notice. please note the revision and/or date on the drawing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package speci?ations do not expand the terms of fairchilds worldwide terms and conditions, speci?ally the warranty therein, which covers fairchild products. always visit fairchild semiconductors online packaging area for the most recent package drawings: http://www .f airchildsemi.com/pac kaging/ note: 1. all dimensions are in millimeters. 2. dimensions are exclusive of burrs, mold fash, and tie bar extrusion. surface mount ?0.4" lead spacing (option ts) (1.54) (1.78) (9.96) (0.76) (2.54) (13.00) recommended land pattern (option s) 10.16 0.20?.40 0.40 min both sides 12.60 max 7.62 typ 9.40?.91 1.50 ?.00 typ 6.35?.86 5.08 max (0.78) 2.54 typ 3.68?.94 1.14?.78 0.51 min
?2010 fairchild semiconductor corporation www.fairchildsemi.com fod3182 rev. 1.0.9 19 fod3182 ?3a output current, high speed mosfet gate driver optocoupler ordering information marking information pa rt number package packing method fod3182 dip 8-pin tube (50 units per tube) FOD3182S smt 8-pin (lead bend) tube (50 units per tube) FOD3182Sd smt 8-pin (lead bend) tape and reel (1,000 units per reel) fod3182v dip 8-pin, iec60747-5-2 option tube (50 units per tube) FOD3182Sv smt 8-pin (lead bend), din en/iec 60747-5-2 option tube (50 units per tube) FOD3182Sdv smt 8-pin (lead bend), din en/iec 60747-5-2 option tape and reel (1,000 units per reel) fod3182tv dip 8-pin, 0.4 lead spacing, din en/iec 60747-5-2 option tube (50 units per tube) fod3182tsv smt 8-pin, 0.4 lead spacing, din en/iec 60747-5-2 option tube (50 units per tube) fod3182tsr2 smt 8-pin, 0.4 lead spacing tape and reel (700 units per reel) fod3182tsr2v smt 8-pin, 0.4 lead spacing, din en/iec 60747-5-2 option tape and reel (700 units per reel) 1 2 6 4 3 5 de?itions 1f airchild logo 2d e vice number 3 vde mark (note: only appears on parts ordered with din en/iec 60747-5-2 option ?see order entry table) 4t wo digit year code, e.g., ?1 5t wo digit work week ranging from ?1 to ?3 6 assembly package code 3182 b yy xx v
?2010 fairchild semiconductor corporation www.fairchildsemi.com fod3182 rev. 1.0.9 20 fod3182 ?3a output current, high speed mosfet gate driver optocoupler carrier tape specifications ?option s symbol description dimension in mm wt ape width 16.0 ?0.3 tt ape thickness 0.30 ?0.05 p 0 sprocket hole pitch 4.0 ?0.1 d 0 sprocket hole diameter 1.55 ?0.05 e sprocket hole location 1.75 ?0.10 fp ocket location 7.5 ?0.1 p 2 2.0 ?0.1 pp ocket pitch 12.0 ?0.1 a 0 po ck et dimensions 10.30 ?.20 b 0 10.30 ?.20 k 0 4.90 ?.20 w 1 cover tape width 13.2 ?0.2 dc ov er tape thickness 0.1 max max. component rotation or tilt 10 r min. bending radius 30 d 0 p t 2 d 0 1 1 w user direction of feed 0 k b 0 a 0 w e d f p p
?2010 fairchild semiconductor corporation www.fairchildsemi.com fod3182 rev. 1.0.9 21 fod3182 ?3a output current, high speed mosfet gate driver optocoupler carrier tape specifications ?option ts symbol description dimension in mm wt ape width 24.0 ?0.3 tt ape thickness 0.40 ?0.1 p 0 sprocket hole pitch 4.0 ?0.1 d 0 sprocket hole diameter 1.55 ?0.05 e sprocket hole location 1.75 ?0.10 fp ocket location 11.5 ?0.1 p 2 2.0 ?0.1 pp ocket pitch 16.0 ?0.1 a 0 po ck et dimensions 12.80 ?0.1 b 0 10.35 ?0.1 k 0 5.7 ?.1 w 1 cover tape width 21.0 ?0.1 dc ov er tape thickness 0.1 max max. component rotation or tilt 10 r min. bending radius 30 d 0 p t 2 d 0 1 1 w user direction of feed 0 k b 0 a 0 w e d f p p
?2010 fairchild semiconductor corporation www.fairchildsemi.com fod3182 rev. 1.0.9 22 fod3182 ?3a output current, high speed mosfet gate driver optocoupler re?w pro?e pro?e freature pb-free assembly pro?e t emperature min. (tsmin) 150? t emperature max. (tsmax) 200? time (t s ) from (tsmin to tsmax) 60?20 seconds ramp-up rate (t l to t p ) 3?/second max. liquidous temperature (t l ) 217? time (t l ) maintained above (t l ) 60?50 seconds p eak body package temperature 260? +0? / ?? time (t p ) within 5? of 260? 30 seconds ramp-down rate (t p to t l ) 6?/second max. time 25? to peak temperature 8 minutes max. time (seconds) te mperature ( c) ti me 25c to peak 260 240 220 200 180 160 140 120 100 80 60 40 20 0 t l t s t l t p t p ts m a x ts m i n 120 preheat area max. ramp-up rate = 3c/s max. ramp-down rate = 6c/s 240 360
?2010 fairchild semiconductor corporation www.fairchildsemi.com fod3182 rev. 1.0.9 23 tradem arks th e following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its global subsidiaries ,and is not in tended to be an exhaustive list of all such trademarks. a ccupower auto-spm build it now coreplus corepower crossvolt ctl cu rrent transfer logic deuxpeed dual cool ecospark e fficientmax esbc fair child fairchild semiconductor fa ct quiet series fact f ast fa stvcore fetbench flashwriter * fps f-pfs frfet global power resource sm green fps green fps e-series g max gto in tellimax isoplanar me gabuck mi crocoupler microfet mi cropak mi cropak2 m illerdrive moti onmax moti on-spm optohit optologic op toplanar pdp spm powe r-spm po we rtrench powerxs pr ogrammable active droop qfet qs quiet series r apidconfigure savi ng our world ,1mw/w/kwatatime si gnalwise sma rtmax smart start spm stealth s uperfet supe rsot -3 s upersot -6 s upersot -8 s upremos syncfet sy nc-lock * th ep ower franchise th er ight technology for your success tinyb oost tinybuck tiny calc ti nylogic tinyopto tinypower tinypwm tinywire trifault detect t ruecurrent * serdes uhc ultra frfet unifet vcx vi sualmax xs *t rademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fa i rchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers t hese products. li fe support policy fa i rchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are in tended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance wi th instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. an ti -counterfeiting policy fairchild semiconductor corporation's anti-counterfeiting policy. fairchild's anti-counterfeiting policy is also stated on our external websi te, www.fairchildsemi.com, under sales support. c ounterfeiting of semiconductor parts is a growing problem in the industry. all manufacturers of semiconductor products are experiencing counterf eiting of their parts. cu stomers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, faile da pplications, and increased cost of production and manufacturing delays. fairchild is taking strong measures to protect ourselves and our customers from the proli feration of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fairchild or from authorized fairchi ld dist ributors who are lis ted by country on our web page cited above. products customers buy either from fairchild directly or from authorized fairchild distributors are ge nuine parts, have full traceability, meet fairchild's quality standards for handling and storage and provide access to fairchild's full range of up-to-date technica land product information. fairchild and our authorized distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. fairc hild will not provide any warranty coverage or other assistance for parts bought from unauthorized sources. fairchild is committed to combat this global problem and encou rage our customers to do their part in stopping this practice by buying direct or from authorized distributors. product status definitions defi nition of terms da tasheet identification product st atus definition ad vance information formative / in design datasheet contains the design specifi cations for product development. s pecifications may change in any manner without notice. pr eliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild se mi conductor reserves the right to make changes at any time without notice to improve design. no i dentification needed full production datasheet contains final specifications. fairchi ld semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. th e datasheet is for reference information only. rev. i51 fod3182 ?3a output current, high speed mosfet gate driver optocoupler

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